Our systems meet the specific requirements of the various methods of pattern transfer processes, such as selectivity of the etching, achievable etch rates and dimensions. We use plasma sources developped inhouse for a wide range of substrate dimensions. Both inert gas processes and reactive gas processes are supported. For this purpose, inert gases such as Ar, Kr, He, etc., as well as reactive gases such as O2, N2, and fluorine-based or chlorine-based etching gases and gas mixtures are used.
In order to achieve better homogeneity a rotating substrate is used in most cases.